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Samsung Electronics Co. said Wednesday that the mass development of a strong solid state drive (SSD) for data centers with improved security solutions has begun.

The South Korean tech giant said PM9A3E1.S is the industry’s first SSD data center-use device built on six-generation V-NAND chips. Supports Open Compute Project (OCP) standards, an association that sets hardware and software standards in data centers.

Samsung, the world’s largest manufacturer of memory chip, said its new SSD has industry-leading power quality that will help data centers lower running costs.

Based on its sequential write speed, PM9A3E1.S supports 283 megabytes per second (MB/s) per 1 watt, a 50 percent increase from its predecessor PM983aM.2, according to Samsung.

If all hard disk drives delivered worldwide last year are converted to the PM9A3 E1.S 4TB product, overall power savings could be up to 1,484 gigawatt hours, Samsung said.

When it comes to performance, PM9A3E1.S offers 3,000 MB/s sequential write speed, which is two times faster than its predecessor. It supports random read and write speeds of 750K IOPS and 160K IOPS, respectively, with an increase of 40 per cent and 150 per cent from its predecessor.

Samsung said the new SSD also comes with improved security solutions, including anti-rollback, which avoids installing firmware with a lower security version and a secure boot that tests the digital signature during the boot process.

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